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      FQA11N90C Semicondutor Mosfet
      FQA11N90C Semicondutor Mosfet

      FQA11N90C Semicondutor Mosfet

      8,000 TND
      TTC

      Quantity :
      Donnez votre avis

      EU3234363840424446USXX5XSSMLXLXXLXXLArm Length6161,56262,56363,56464,5Bust Circumference8084889296101106111Waist Girth6165697377828792Hip Circumference87919599103108113118

      • Paiement:Paiement: Tous les types de paiement disponibles
      • Livraison:Livraison: Option de mode de livraison diversifiée
      • Politique retoursPolitique retours Echange ou remboursement possible sous conditions

      Manufacturer: ON Semiconductor

      Product Category: MOSFET

      Mounting Style: Through Hole

      Package/Case: TO-3PN-3

      Number of Channels: 1 Channel

      Transistor Polarity: N-Channel

      Vds – Drain-Source Breakdown Voltage: 900 V

      Id – Continuous Drain Current: 11 A

      Rds On – Drain-Source Resistance: 1.4 Ohms

      Vgs – Gate-Source Voltage: 30 V

      Minimum Operating Temperature: – 55 C

      Maximum Operating Temperature: + 150 C

      Configuration: Single

      Pd – Power Dissipation: 300 W

      Channel Mode: Enhancement

      Tradename: QFET

      Height: 20.1 mm

      Length: 16.2 mm

      Transistor Type: 1 N-Channel

      Brand: ON Semiconductor / Fairchild

      Fall Time: 85 ns

      Rise Time: 130 ns

      Typical Turn-Off Delay Time: 130 ns

      Typical Turn-On Delay Time: 60 ns

      0100-00753

      Références spécifiques

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      FQA11N90C Semicondutor Mosfet

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