Characteristics of BD910 Transistor

Type: PNP

Collector-Emitter Voltage: -80 V

Collector-Base Voltage: -80 V

Emitter-Base Voltage: -5 V

Collector Current: -15 A

Collector Dissipation: 90 W

DC Current Gain (hfe): 15 to 150

Transition Frequency: 3 MHz

Operating and Storage Junction Temperature Range: -65 to +150 °C

Package: TO-220